808nm 1000mW High-power Laser Diode ( AL808T1000 )
Features:
  • High output power: =1000mw
  • Wavelength: 808nm±3nm
  • Quantum Well Structural
  • Standard TO-3 Package

Applications:

  • Diode pump solid state laser
  • Medical instrument
  • Infra-light
  • Sensor
Absolute Maximum ratings(Tc=25 degrees C)

Parameter

Symbol

Rating

Unit

Optical Power

po

=1000

mw

Operating Temperature

Top

-10~40

C

Storage Temperature

Tstg

-40~80

C

LD Reverse Voltage

VRLD

=2

V

PD Reverse Voltage)

VRPD

=40

V

Optical &Electrical Characteristics(Tc=25 degrees C)

Parameter

Symbol

Typ Value

Unit

Lasing Wavelength

nm

808±5

nm

Threshold Current

Ith

=250

mA

Operating Current

Iop

=1500

mA

Operating Voltage

Vop

=2.4

V

Slope Efficiency

 

=1

(W/A)

Emitting Aperture Size

W×H

100*1

µm

Beam Divergence

Theta parr

=12

deg

Theta perp

=35

Operating Temperature

C

25

C

 

Notes:

1.Fiber Pigtail optional.

2. ESD precautions must be taken when handling this product.

2. Laser radiation avoid direct exposure to beam.

3. Specifications subject to change

We have an unbeatable low price for this product.

  • price is updating, please make a request for our most recent price by calling (514)334-4588 or by emailing sales2@o-eland.com

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