808nm 500mW High-power Laser Diode (AL808T500)
Features:
  • High output power: 500mw
  • Wavelength:808±3nm (CW)
  • Quantum well design
  • Standard TO-5 Package(f=9mm)

Applications:

  • Diode pump solid state laser
  • Medical instrument
  • Infra-light
  • Sensor

 
Absolute Maximum ratings(Tc=25 degrees C)

Parameter

Symbol

Rating

Unit
Optical Power

po

=500

mw
Operating Temperature

Top

-10~40

C
Storage Temperature

Tstg

-40~80

C
LD Reverse Voltage

VRLD

=2

V
PD Reverse Voltage

VRPD

=40

V

Optical &Electrical Characteristics(Tc=25 degrees C)

Parameter

Symbol

Typ

Unit
Lasing Wavelength

nm

808±3

nm
Threshold Current

Ith

=100

mA
Operating Current

Iop

=700

mA
Operating Voltage

Vop

=2

V
Slope Efficiency

 

=1

(W/A)
Emitting Aperture Size

W×H

50*1

µm
Beam Divergence

Theta parr

=12

deg

Theta perp

=35
Operating Temperature

C

25

C

 

Notes:

1.Fiber Pigtail optional.

2. ESD precautions must be taken when handling this product.

2. Laser radiation avoid direct exposure to beam.

3. Specifications subject to change

We have an unbeatable low price for this product.

  • price is updating, please make a request for our most recent price by calling (514)334-4588 or by emailing sales2@o-eland.com

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